Iedm 2024 Kioxia Exceria. In this session, seven papers focusing on the recent progress in dram with os channel will be presented. (1) a new type of dram utilizing oxide semiconductors with a focus on reducing.

At iedm, kioxia will unveil cutting edge technologies tailored to each of these three semiconductor memory layers: The ingazno vct achieved ion=15ua/cell (vg=2v) and ioff=1aa/cell.